Correlations between the Transition Temperature ofNb3Ge and the Normal-State Resistivity

Abstract
Correlations of Tc with features of the normal-state resistance as a function of temperature for Nb3Ge films are discussed. It is found that high-Tc samples have smaller normal-state residual resistivities than low-Tc samples and, secondly, that dρdT at high temperatures is smaller for low-Tc samples.