Cadmium-tin oxide films deposited by rf sputtering from a CdO-SnO2 target
- 1 October 1979
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 35 (7), 542-543
- https://doi.org/10.1063/1.91208
Abstract
Cadmium‐tin oxide (CTO) films with high conductivity and high transparency were prepared by rf sputtering from a CdO‐SnO2 target in an Ar or Ar‐O2 atmosphere. The resistivity of CTO films was 6.5×10−4 Ω in the film thickness range of 2500–15000 Å, and the average transmission was 90% over the visible region.Keywords
This publication has 7 references indexed in Scilit:
- Sputter deposition and characterization of Cd2SnO4 filmsThin Solid Films, 1978
- Preparation of Si–C Films by Plasma Deposition Process with NeutralizationJapanese Journal of Applied Physics, 1978
- Cd–Sn Oxide Films by DC Reactive Sputtering as Transparent ElectrodesJapanese Journal of Applied Physics, 1978
- Effects of heat treatment on the optical and electrical properties of indium–tin oxide filmsJournal of Applied Physics, 1978
- Properties of cadmium stannate films prepared by r.f. sputtering from powder targetsThin Solid Films, 1977
- Transparent electrode properties of cadmium stannateApplied Physics Letters, 1976
- Optical and Electrical Properties ofSn: A Defect SemiconductorPhysical Review B, 1972