Quasi-one-dimensional effects in submicron width silicon inversion layers
- 1 July 1984
- journal article
- Published by Elsevier in Surface Science
- Vol. 142 (1-3), 19-24
- https://doi.org/10.1016/0039-6028(84)90277-2
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Localization and Electron-Electron Interaction Effects in Submicron-Width Inversion LayersPhysical Review Letters, 1982
- Projection photolithography-liftoff techniques for production of 0.2-µm metal patternsIEEE Transactions on Electron Devices, 1981