Interface state trapping and dark current generation in buried-channel charge-coupled devices
- 1 March 1982
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 53 (3), 1745-1753
- https://doi.org/10.1063/1.331644
Abstract
No abstract availableKeywords
This publication has 22 references indexed in Scilit:
- Optimum scaling of buried-channel CCD'sIEEE Transactions on Electron Devices, 1980
- A New Technique for Hardening CCD Imagers by Suppression of Interface State GenerationIEEE Transactions on Nuclear Science, 1980
- Determination of surface-state parameters from transfer-loss measurements in CCD’sJournal of Applied Physics, 1979
- Experimental characterization of transfer Efficiency in charge-coupled devicesIEEE Transactions on Electron Devices, 1975
- The effects of bulk traps on the performance of bulk channel charge-coupled devicesIEEE Transactions on Electron Devices, 1974
- Overlapping-gate buried-channel charge-coupled devicesElectronics Letters, 1973
- The quantitative effects of interface states on the performance of charge-coupled devicesIEEE Transactions on Electron Devices, 1973
- Fast-Interface-State Losses in Charge-Coupled DevicesApplied Physics Letters, 1972
- Peristaltic charge-coupled device: a new type of charge-transfer deviceElectronics Letters, 1972
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967