Thermal-wave measurements of ion implanted silicon
- 1 January 1987
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 21 (1-4), 550-553
- https://doi.org/10.1016/0168-583x(87)90901-3
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Ion implant monitoring with thermal wave technologyApplied Physics Letters, 1985
- Characteristics of Ion‐Implantation Damage and Annealing Phenomena in SemiconductorsJournal of the Electrochemical Society, 1984
- Amorphization of silicon by ion implantation: Homogeneous or heterogeneous nucleation?Radiation Effects, 1976