Determination of the barrier height in metal-CdF2Schottky diodes
- 1 February 1978
- journal article
- Published by IOP Publishing in Journal of Physics D: Applied Physics
- Vol. 11 (2), L17-L21
- https://doi.org/10.1088/0022-3727/11/2/003
Abstract
Schottky diodes on highly conducting CdF2 crystals have been produced with Au and Al metals electrodes. Based upon internal photoemission, capacitance and I(V) measurements, the metal-CdF2 zero-field barrier heights were determined. The average values are 1.45 eV for the Au electrode and 0.82 eV for the Al electrode. The electron affinity of the chemically etched CdF2 was estimated to be 3.6 eV in agreement with the value derived from the measurements of external photoemission, 4.1 eV. The interface properties of the metal-CdF2 system are brief discussed.Keywords
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