Electrical transport properties of thin polycrystalline SnO2 film sensors
- 1 March 1992
- journal article
- Published by Elsevier in Sensors and Actuators B: Chemical
- Vol. 7 (1-3), 704-708
- https://doi.org/10.1016/0925-4005(92)80389-f
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Hall effect measurements in SnOx film sensors exposed to reducing and oxidizing gasesThin Solid Films, 1990
- Integrated semiconductor gas sensors evaluation with an automatic test systemSensors and Actuators B: Chemical, 1990
- Surface processes in the detection of reducing gases with SnO2-based devicesSensors and Actuators, 1989
- Theoretical description of gas-film interaction on SnOxThin Solid Films, 1988
- SnO films and their oxidation to SnO2: Raman scattering, IR reflectivity and X-ray diffraction studiesThin Solid Films, 1984
- The Hall effect in polycrystalline and powdered semiconductorsReports on Progress in Physics, 1980
- A numerical analysis of various cross sheet resistor test structuresSolid-State Electronics, 1977
- Thermally stimulated emission from traps and related problems in SnO2 monocrystalsPhysica Status Solidi (a), 1970
- Photoelectronic Analysis of Imperfections in Grown Stannic Oxide Single CrystalsJournal of Applied Physics, 1965