Electrically pumped circular-grating surface-emitting DBR laser on InGaAs strained single-quantum-well structure
- 1 October 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Photonics Technology Letters
- Vol. 4 (10), 1087-1089
- https://doi.org/10.1109/68.163740
Abstract
The authors demonstrate the fabrication and room temperature operation of an electrically pumped circular-grating surface-emitting distributed-Bragg-reflector laser. An InGaAs/GaAs single quantum well (SQW) graded-index separate confinement heterostructure (GRINSCH) structure was grown by one-step molecular beam epitaxy (MBE). Circular gratings were defined by focused ion beam lithography. The lasing wavelength was 942 nm, and the threshold current was 280 mA. This is the first demonstration of these lasers with no epitaxial regrowth.Keywords
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