Bias-dependent photoluminescence intensities in n-InP Schottky diodes
- 1 December 1980
- journal article
- letter
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 51 (12), 6432-6434
- https://doi.org/10.1063/1.327595
Abstract
A remarkable change of the photoluminescence (PL) intensity with the variation of the dc bias voltage is observed in Au/n‐InP Schottky surface. It is found from the observation of the surface band bending that the PL intensity is dominantly affected by the surface space‐charge layer. The maximum PL intensity is found to be attained at the flat‐band bias condition.Keywords
This publication has 4 references indexed in Scilit:
- Evidence for low surface recombination velocity on n-type InPApplied Physics Letters, 1977
- Electroreflectance of Si-MOSJapanese Journal of Applied Physics, 1976
- Measurement of Diffusion Lengths in Direct-Gap Semiconductors by Electron-Beam ExcitationJournal of Applied Physics, 1967
- Field Control of the Quantum Efficiency of Radiative Recombination in SemiconductorsPhysical Review B, 1965