Carrier concentration and mobility of PbTe and Pb1−xSnxTe LPE thin layers

Abstract

Galvanomagnetic measurements were made on n‐type PbTe and p‐type Pb_0.79Sn_0.21Te layers, 5 to 20 μm thick, grown by liquid‐phase epitaxy (LPE) on highly conductive PbTe or Pb_1−xSn_xTe substrates. PbSnTe‐PbTe heterostructure diodes were formed in order to isolate the measured layer from the underlying substrate (or LPE layer). The dependence of carrier concentration and mobility on LPE growth temperature in the range 470–650 °C was studied. The carrier concentration of the epilayers was found to be strongly influenced by the underlying layer or substrate, possibly due to interdiffusion of native defects during the LPE growth process. Bulklike mobilities were measured between 4.2 and 77 K.