Transient photoconductivity measurements in semi-insulating GaAs. II. A digital approach
- 15 September 1987
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 62 (6), 2432-2438
- https://doi.org/10.1063/1.339476
Abstract
We describe an experimental setup designed to study photoconductive transients in semi-insulating materials. The method, known as photoinduced transient spectroscopy, is based on a digital signal-averaging technique. Although this digital method eliminates or reduces many of the experimental problems encountered when using an analog approach, several new problems arise. The method is described, and the difficulties are illustrated using data obtained from both Cr-doped and nominally undoped samples of GaAs.Keywords
This publication has 11 references indexed in Scilit:
- Transient photoconductivity measurements in semi-insulating GaAs. I. An analog approachJournal of Applied Physics, 1987
- A characterization of chromium doped GaAs substrates using photo-induced transient spectroscopyMaterials Research Bulletin, 1986
- Deep Level Defects in CdTeMRS Proceedings, 1986
- Identification of oxygen-related midgap level in GaAsApplied Physics Letters, 1984
- Chromium as a hole trap in GaP and GaAsApplied Physics Letters, 1980
- Electron traps in bulk and epitaxial GaAs crystalsElectronics Letters, 1977
- A study of deep levels in GaAs by capacitance spectroscopyJournal of Electronic Materials, 1975
- A study of electron traps in vapour-phase epitaxial GaAsApplied Physics B Laser and Optics, 1975
- Deep levels in gallium arsenide by capacitance methodsApplied Physics A, 1974
- Analysis of exponential curves by a method of moments, with special attention to sedimentation equilibrium and fluorescence decayBiochemistry, 1971