A study of deep levels in GaAs by capacitance spectroscopy
- 1 October 1975
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 4 (5), 1053-1066
- https://doi.org/10.1007/bf02660189
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Scattering of Rayleigh waves by surface defectsJournal of Applied Physics, 1974
- Nonradiative Capture and Recombination at Deep Centers in GaP and GaAs by Multiphonon EmissionPublished by Springer Nature ,1974
- Optical Properties of Excitons Bound to Copper-Complex Centers in Gallium ArsenidePhysical Review B, 1973
- Schottky-barrier capacitance measurements for deep level impurity determinationSolid-State Electronics, 1973
- Depth profile of concentration of deep-level impurities in vapor-phase epitaxial gallium-arsenide grown under various arsenic vapor pressuresJournal of Applied Physics, 1973
- Determination of deep levels in semiconductors from C-V measurementsIEEE Transactions on Electron Devices, 1972
- Deep Energy Levels in the High Resistance Region at GaAs Vapor Epitaxial Film-Substrate InterfaceJapanese Journal of Applied Physics, 1970
- Capacitance Measurements on Au–GaAs Schottky BarriersJournal of Applied Physics, 1968
- Trapping analysis in gallium arsenideSolid State Communications, 1968
- Radiation by an Electron Beam Interacting with a Diffraction Grating. Two-Dimensional TheoryJournal of Applied Physics, 1966