100 GHz active electronic probe for on-wafer S-parameter measurements

Abstract

We report the development of an active electronic probe for 100 GHz on-wafer S-parameter measurements. Integrated on the substrate of this wafer probe were a quintupler for 100 GHz stimulus signal generation, two directional couplers for incident and reflected signals sampling, and two newly developed harmonic mixers to down-convert these 100 GHz signals to 20 MHz. We have also demonstrated all-electronic on-wafer 75-100 GHz two-port S-parameter measurements using these probes.