A high-current drivability i-AlGaAs/n-GaAs doped-channel MIS-Like FET (DMT)
- 1 November 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 7 (11), 625-626
- https://doi.org/10.1109/EDL.1986.26497