Absorption of ballistic phonons by the (001) inversion layer of Si: Electron-phonon interaction in two dimensions
- 15 July 1983
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 28 (2), 1124-1126
- https://doi.org/10.1103/physrevb.28.1124
Abstract
We report the observation of absorption as a function of electron density of ballistic phonons in the two-dimensional electron gas in the (001) inversion layer of Si. Remarkably, the strength of the absorption is found to be an order of magnitude greater than can be explained by a conventional absorption model based on electron scattering in two dimensions and a deformation-potential electron-phonon interaction characteristic of bulk Si.Keywords
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