Monte Carlo study of the dynamic breakdown effects in HEMT's
- 1 April 2000
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 21 (4), 149-151
- https://doi.org/10.1109/55.830964
Abstract
We present a theoretical investigation of the near-breakdown scenario in pseudomorphic high electron mobility transistors (HEMT's). We show that the main mechanism for the enhanced drain current is a parasitic bipolar effect due to holes, generated by impact ionization, which accumulate in the channel and in the substrate close to the source contact. The dynamic of this charge accumulation and of the consequent drain current increase is studied by means of a two-dimensional (2-D) Poisson Monte Carlo simulator.Keywords
This publication has 15 references indexed in Scilit:
- Characterization of hole transport phenomena in AlGaAs-InGaAs HEMT's biased in impact-ionization regimePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET'sIEEE Transactions on Electron Devices, 1999
- An analysis of the kink phenomena in InAlAs/InGaAs HEMT's using two-dimensional device simulationIEEE Transactions on Electron Devices, 1998
- Monte Carlo simulation of impact ionisation in MESFETsElectronics Letters, 1997
- Current instability and burnout of HEMT structuresSolid-State Electronics, 1996
- Kink modification using body contact bias in InP based InAlAs/InGaAs HEMTsElectronics Letters, 1996
- Influence of impact ionization on the drain conductance in InAs-AlSb quantum well heterostructure field-effect transistorsIEEE Electron Device Letters, 1995
- Parasitic bipolar effects in submicrometer GaAs MESFET'sIEEE Electron Device Letters, 1987
- Analysis of kink characteristics in Silicon-on-insulator MOSFET's using two-carrier modelingIEEE Transactions on Electron Devices, 1985
- Gate-drain avalanche breakdown in GaAs power MESFET'sIEEE Transactions on Electron Devices, 1982