Impact ionization suppression by quantum confinement: Effects on the DC and microwave performance of narrow-gap channel InAs/AlSb HFET's
- 1 May 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 46 (5), 826-832
- https://doi.org/10.1109/16.760386
Abstract
No abstract availableThis publication has 17 references indexed in Scilit:
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