Oxygen-Related Defect Centers Observed in 4H/6H-SiC Epitaxial Layers Grown under CO2 Ambient

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17 January 2001

journal article
Published by Trans Tech Publications, Ltd. in Materials Science Forum

Vol. 353-356, 459-462
https://doi.org/10.4028/www.scientific.net/msf.353-356.459

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Cited by 5 articles