A Quantitative Study of Auger Electron Signals of Phosphorus on Silicon Using a Quartz Crystal Microbalance

Abstract

The Auger electron intensities of phosphorus on the (111) face of silicon have been measured as a function of coverage. Measurements of phosphorus coverage were obtained by using a quartz crystal microbalance during phosphorus (P2) evaporation from gallium phosphide crystals. A mass spectrometer was used to determine sticking coefficients on both the microbalance and sample.