Picosecond Photoinduced Transmission Associated with Deep Traps in Phosphorus-Doped-Si: H
- 19 April 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 48 (16), 1132-1135
- https://doi.org/10.1103/physrevlett.48.1132
Abstract
Photoinduced transmission was observed in the picosecond time domain in phosphorus-doped -Si: H and connected with deep hole traps produced by doping. The hole transport was found to be dispersive starting before 5 ps and temperature dependent. This shows that the energy distribution of shallow traps is exponential beginning below eV from the valence-band top. The deep traps are negatively charged defects, the trapped holes are removed from the recombination process, and their distribution peaks at 0.45 eV above the valence-band top.
Keywords
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