Heteroepitaxial growth of tin-doped indium oxide films on single crystalline yttria stabilized zirconia substrates
- 16 May 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 64 (20), 2712-2714
- https://doi.org/10.1063/1.111474
Abstract
Heteroepitaxial growth of tin-doped indium oxide (ITO) film was achieved for the first time by using single crystalline yttria stabilized zirconia (YSZ) as substrates. The epitaxial relationship between ITO film and YSZ substrate was ITO[100]∥YSZ[100]. By comparing the electrical properties of this epitaxial ITO film with that of a randomly oriented polycrystalline ITO film grown on a glass substrate, neither the large angle grain boundaries nor the crystalline orientation were revealed to be dominant in determining the carrier mobility in ITO films.Keywords
This publication has 8 references indexed in Scilit:
- Microstructure and Electrical Characteristics of Sputtered Indium Tin Oxide FilmsJournal of the Electrochemical Society, 1993
- Electrical and structural properties of low resistivity tin-doped indium oxide filmsJournal of Applied Physics, 1992
- Low-temperature dielectric properties of candidate substrates for high-temperature superconductors: LaAlO3 and ZrO2 : 9.5 mol % Y2O3Journal of Applied Physics, 1990
- Low resistivity indium–tin oxide transparent conductive films. II. Effect of sputtering voltage on electrical property of filmsJournal of Vacuum Science & Technology A, 1990
- Properties of highly conducting ITO films prepared by ion platingApplied Surface Science, 1988
- Evaporated Sn-doped In2O3 films: Basic optical properties and applications to energy-efficient windowsJournal of Applied Physics, 1986
- Properties of tin doped indium oxide thin films prepared by magnetron sputteringJournal of Applied Physics, 1983
- Electrical and optical properties of In2O3: Sn films prepared by activated reactive evaporationThin Solid Films, 1980