Native Point Defect States in ZnO
- 16 August 2001
- journal article
- Published by IOP Publishing in Chinese Physics Letters
- Vol. 18 (9), 1252-1253
- https://doi.org/10.1088/0256-307x/18/9/331
Abstract
The native point defect states in ZnO have been calculated by using a full-potential linear muffin-tin orbital method. The results show that Zn vacancy and O interstitial produce the shallow acceptor levels above the valence band. The O vacancy produces a deep donor level, while Zn interstitial produces a shallow donor level, both below the conduction band. The Zn interstitial is the main factor which induces the native n-type conductivity in ZnO.Keywords
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