Effects of inductively coupled plasma treatment using O2, CF4, and CH4 on the characteristics of organic light emitting diodes
- 26 February 2007
- journal article
- Published by Elsevier in Surface and Coatings Technology
- Vol. 201 (9-11), 5012-5016
- https://doi.org/10.1016/j.surfcoat.2006.07.099
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Characteristics of Organic Light-Emitting Devices by the Surface Treatment of Indium Tin Oxide Surfaces Using Atmospheric Pressure PlasmasJapanese Journal of Applied Physics, 2004
- Conducting fluorocarbon coatings for organic light-emitting diodesApplied Physics Letters, 2004
- Efficient light emitting diodes with Teflon buffer layerSynthetic Metals, 2002
- Molecular organic light-emitting diodes using highly conducting polymers as anodesApplied Physics Letters, 2002
- Surface electronic structure of plasma-treated indium tin oxidesApplied Physics Letters, 2001
- Interface engineering in preparation of organic surface-emitting diodesApplied Physics Letters, 1999
- Enhanced brightness and efficiency in organic electroluminescent devices using SiO2 buffer layersApplied Physics Letters, 1999
- Fabrication of highly efficient organic electroluminescent devicesApplied Physics Letters, 1998
- A metal-free cathode for organic semiconductor devicesApplied Physics Letters, 1998
- Organic electroluminescent diodesApplied Physics Letters, 1987