Parametric Approach to Surface Screening of a Weak External Electric Field

Abstract
We have studied the problem of the penetration of a uniform external electric field at the surface of a metal or degenerate semiconductor within the random-phase approximation. In its most general form, this problem involves the solution of a complex integrodifferential equation. This problem has been studied most recently by Newns using Fourier analysis and numerical inversion of an infinite-dimensional response matrix. We have found that using a parametric representation of the potential, V(x)=V0(1α)1(eλxαe2λx), in the integral equation led to simple transcendental equations for determining the parameters. The potential which resulted was tested for full self-consistency by using it as a source for a single iteration of the full integral equation. A comparison between the first iteration and results obtained by Newns (for the case rs=2) showed that they agreed within a few percent.