Implantation and transient boron diffusion: the role of the silicon self-interstitial
- 1 March 1995
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 96 (1-2), 187-195
- https://doi.org/10.1016/0168-583x(94)00481-1
Abstract
No abstract availableThis publication has 22 references indexed in Scilit:
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