Radiation and hot-electron effects on SiO2/Si interfaces with oxides grown in O2 containing small amounts of trichloroethane
- 15 February 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (7), 573-575
- https://doi.org/10.1063/1.99397
Abstract
The hardness of SiO2/Si structures grown in O2+TCA (1,1,1,‐trichloroethane) to damages caused by ionizing radiation and hot‐electron injection has been found to depend strongly on the amount of TCA introduced. Using minute amounts (much smaller than conventionally used) of TCA, we have been able to achieve a dramatic improvement of the hardness. When excess amounts of TCA are used, however, the hardness degrades. In addition, the use of TCA also causes a significant change in the gate size dependence of the radiation or hot‐electron‐induced interface traps. These results will be explained in terms of the effects of Cl on the interfacial strain near the SiO2/Si transition region.Keywords
This publication has 7 references indexed in Scilit:
- Hot-electron induced interface traps in metal/SiO2/Si capacitors: The effect of gate-induced strainApplied Physics Letters, 1986
- Dependence of X-Ray Generation of Interface Traps on Gate Metal Induced Interfacial Stress in MOS StructuresIEEE Transactions on Nuclear Science, 1984
- Gate-width dependence of radiation-induced interface traps in metal/SiO2/Si devicesApplied Physics Letters, 1983
- Effects of HCL gettering, CR doping and AL+ implantation on hardened SiO2IEEE Transactions on Nuclear Science, 1974
- Dielectric Breakdown Properties of SiO2 Films Grown in Halogen and Hydrogen‐Containing EnvironmentsJournal of the Electrochemical Society, 1974
- Neutralization of Na+ Ions in ``HCl-Grown'' SiO2Applied Physics Letters, 1972
- Use of HCl Gettering in Silicon Device ProcessingJournal of the Electrochemical Society, 1971