Electron beam fabrication of submicrometer diameter mixer diodes for millimeter and submillimeter wavelengths
- 1 November 1972
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in Proceedings of the IEEE
- Vol. 60 (11), 1446-1447
- https://doi.org/10.1109/proc.1972.8924
Abstract
Using an electron beam fabrication technique, GaAs Schottky barrier diodes have been produced with submicrometer dimensions, which is a considerable reduction in size over that attainable using conventional photoresist techniques. This advancement should improve the performance of Schottky barrier mixers and detectors at millimeter wavelengths and extend their use to submillimeter wavelengths.Keywords
This publication has 3 references indexed in Scilit:
- Schottky Barriers on GaAsPhysical Review B, 1969
- Millimeter frequency conversion using Au-n-type GaAs Schottky barrier epitaxial diodes with a novel contacting techniqueProceedings of the IEEE, 1965
- Diffusion and Solubility of Copper in Extrinsic and Intrinsic Germanium, Silicon, and Gallium ArsenideJournal of Applied Physics, 1964