We have investigated the effects of varying Si oxidation conditions on intrinsic film stress for SiO2 films formed on Si. This study includes stress measurements on four Si orientations: (100), (110), (111), and (311); at oxidation temperatures ranging from 700 to 1100 °C; wet (H2O) versus dry (O2) oxidations for (100) and (111) surfaces; and the effects of postoxidation annealing on stress. We find the following orientation dependence for intrinsic stress measured as a function of oxidation temperature: (110)≥(311)≥(100)>(111); a reduction in stress for wet versus dry studies; and an even larger reduction for postoxidation anneals. A recently proposed step model accounts for the differences in stress between the (111) and the remaining Si orientations. A number of Si oxidationmodels based on intrinsic stress are compared in their ability to describe observed kinetic behavior, and we conclude that within the Deal–Grove oxidationmodel, the linear rate constant is strongly influenced by stress in the initial regime while stress is also likely to be important for thicker films.