Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devices
- 1 February 2000
- journal article
- research article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 209 (4), 1004-1008
- https://doi.org/10.1016/s0022-0248(99)00742-3
Abstract
No abstract availableKeywords
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