Very low threshold current density of a GaInP/AlGaInP double-heterostructure laser grown by MOCVD

Abstract

A GaInP/AlGaInP broad-area (60 × 500 μm2) laser grown by MOCVD has obtained a very low threshold current density Jth of 1.1 kA/cm2. The dependence of Jth and differential quantum efficiency on cavity length was measured to determine internal quantum efficiency, losses and the gain constant, which were found to be comparable to these characteristics in an AlGaAs laser.