CW operation of 1.5 μm InGaAsP/InP BH lasers with a reactive-ion-etched facet

Publisher Website
Google Scholar
Abstract
The reactive-ion-etching (RIE) technique utilising a TiO2 mask and Cl2-Ar gas is successfully applied to facet mirror fabrication of 1.5 μm InGaAsP/InP buried-heterostructure (BH) lasers. Room-temperature CW operation has been achieved with a structure having one etched and one cleaved facet. A threshold current value of 30 mA at 25°C has been achieved for a laser with a 380 μm cavity length.