Oxygen incorporation in molecular-beam epitaxial silicon doped using a boric oxide source
- 1 September 1988
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 64 (5), 2751-2754
- https://doi.org/10.1063/1.341619
Abstract
Oxygen incorporation in epitaxial silicon produced by molecular-beam epitaxy and boron doped by coevaporation of boric oxide has been investigated. The concentration of oxygen in the deposited layers was measured using secondary-ion mass spectrometry and shown to depend on a number of growth parameters. A reaction mechanism is proposed and is quantitatively modeled using a thermodynamic approach. A simple expression is given for determining the onset of oxygen incorporation.Keywords
This publication has 6 references indexed in Scilit:
- Boron heavy doping for Si molecular beam epitaxy using a HBO2 sourceApplied Physics Letters, 1987
- Boron oxide interaction with silicon in silicon molecular beam epitaxyApplied Physics Letters, 1986
- Boron doping in Si molecular beam epitaxy by co-evaporation of B2O3 or doped siliconApplied Physics Letters, 1986
- Microstructure of silicon implanted with high dose oxygen ionsApplied Physics Letters, 1985
- Solubility and Diffusion Coefficient of Oxygen in SiliconJapanese Journal of Applied Physics, 1985
- Surface restoration of oxygen-implanted siliconJournal of Applied Physics, 1983