High Power and High Efficiency Semipolar InGaN Light Emitting Diodes
- 1 January 2008
- journal article
- Published by Illuminating Engineering Society of Japan in Journal of Light & Visual Environment
- Vol. 32 (2), 107-110
- https://doi.org/10.2150/jlve.32.107
Abstract
We demonstrate high power blue and green InGaN/GaN multiple-quantum-well (MQW) light emitting diodes (LEDs) grown on low extended defect density semipolar (10 1 1) and (11 2 2) bulk GaN substrates by metal organic chemical vapor deposition. The output power and external quantum efficiency (EQE) at 20 mA under pulsed operation (10 % duty cycle) were 19.7 mW and 34.4 % for the blue LED and 9.0 mW and 18.9 % for the green LED, respectively. The blue LED showed <1 nm red-shift with change in drive current from 1 - 200 mA, indicating a significant reduction of polarization related internal electric fields.Keywords
This publication has 22 references indexed in Scilit:
- Light-polarization characteristics of electroluminescence from InGaN∕GaN light-emitting diodes prepared on (112¯2)-plane GaNJournal of Applied Physics, 2006
- First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar PlanesJapanese Journal of Applied Physics, 2006
- Strain-induced polarization in wurtzite III-nitride semipolar layersJournal of Applied Physics, 2006
- Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diodeApplied Physics Letters, 2005
- Photonic Band Gap in Anodic Porous Alumina with Extremely High Aspect Ratio Formed in Phosphoric Acid SolutionJapanese Journal of Applied Physics, 2000
- Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodesNature, 2000
- Spontaneous versus Piezoelectric Polarization in III-V Nitrides: Conceptual Aspects and Practical ConsequencesPhysica Status Solidi (b), 1999
- The role of piezoelectric fields in GaN-based quantum wellsMRS Internet Journal of Nitride Semiconductor Research, 1998
- The Blue Laser DiodePublished by Springer Nature ,1997
- Spontaneous emission of localized excitons in InGaN single and multiquantum well structuresApplied Physics Letters, 1996