InGaAsSb negative luminescent devices with built-in cavities emitting at
- 1 December 2003
- journal article
- Published by Elsevier in Physica E: Low-dimensional Systems and Nanostructures
- Vol. 20 (3-4), 548-552
- https://doi.org/10.1016/j.physe.2003.09.007
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Negative luminescence at 3.9 µm in InGaAsSb-based diodesSemiconductors, 2003
- Heat transfer mapping in 3–5 μm planar light emitting structuresJournal of Applied Physics, 2003
- InAs and InAsSb LEDs with built-in cavitiesSemiconductor Science and Technology, 2003
- Towards efficient mid-IR LED operation: optical pumping, extraction or injection of carriers?Journal of Modern Optics, 2002
- Towards longwave (5–6 µm) LED operation at 80°C: injection or extraction of carriers?IEE Proceedings - Optoelectronics, 2002
- Current crowding in InAsSb light-emitting diodesApplied Physics Letters, 2001