Surface contributions to the two-layer structure in the plasma deposition of a-Si : H
- 1 April 1984
- journal article
- letter
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 49 (4), L47-L52
- https://doi.org/10.1080/13642818408246519
Abstract
Recent studies in several laboratories have shown that some thicknessdependent physical properties of a-Si : H may be modelled on a thin, constant-thickness surface layer adjoining a variable-thickness bulk layer. Water permeation, Auger electron spectroscopy and elastic-recoil detection results from our laboratory all point to contamination of the a-Si : H surface as a source of the thin layer.Keywords
This publication has 30 references indexed in Scilit:
- Determination of the molecular symmetry of acetylene on Ni(001) by electron-impact scatteringPhysical Review B, 1983
- Compositional characterization of microwave plasma a-Si: H filmsCanadian Journal of Physics, 1983
- HYDROGEN PROFILING IN GAS PHASE DOPED AND ION IMPLANTED AMORPHOUS SILICON FILMSLe Journal de Physique Colloques, 1981
- On the water wettability of goldJournal of Colloid and Interface Science, 1981
- Thickness-dependent conductivity and photoconductivity of hydrogenated amorphous siliconSolar Cells, 1980
- Thickness and temperature dependence of the conductivity of phosphorus-doped hydrogenated amorphous siliconPhilosophical Magazine Part B, 1980
- Thickness dependent conductivity of n-type hydrogenated amorphous siliconJournal of Non-Crystalline Solids, 1980
- On the vibrational electron energy loss spectra of benzene chemisorbed on the (111) and (100) nickel facesSurface Science, 1979
- Photoemission Observations ofBonding and Surface Reactions of Adsorbed Hydrocarbons on Ni(111)Physical Review Letters, 1974
- The Large Volume Microwave Plasma Generator (LMP™): A New Tool for Research and Industrial Processing*The Journal of Microwave Power, 1972