Admittance spectroscopy of deep impurity levels: ZnTe Schottky barriers
- 15 July 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (2), 54-56
- https://doi.org/10.1063/1.1654276
Abstract
A new method of deep‐level spectroscopy is demonstrated on ZnTe Schottky‐barrier diodes. Peaks in conductance measured as a function of temperature and frequency yield level depths and capture coefficients. A small‐signal theory is developed for numerical comparison to capacitance data, yielding level types and densities.Keywords
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