Anomalous Forward Switching Transient in p-n Junction Diodes

Abstract

A delay in the flow of forward current when a grown‐crystal p‐n junction diode is switched from reverse to forward bias is explained on the basis of an extra p‐n barrier in the grown‐crystal bar. This effect was observed in 10 out of 24 production units, while no such anomaly was found in fused‐junction diodes. A mathematical theory of the effect gives good agreement with the experimental results.