Amorphous Si/Si heterojunction microwave transistors
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 10 (1), 4-6
- https://doi.org/10.1109/55.31663
Abstract
Because the emitter-base junctions of amorphous Si/Si heterojunction bipolar transistors (HBTs) with a conventional structure are inside the amorphous Si (a-Si) layer, their high-frequency performance is limited due to very low electron velocity in a-Si. An improved structure, the two-dimensional-electron-gas (2DEG) emitter structure, is proposed to overcome these problems, and a-Si/Si HBTs with good high-frequency performance are fabricated. Their low-temperature fabrication technology can be extended to other III-V-compound HBTs.< >Keywords
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