Defect chemistry and intrinsic carrier concentration for Hg1−x Cdx Te(s) for x = 0.20, 0.40, and 1.0
- 1 September 1983
- journal article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 12 (5), 771-826
- https://doi.org/10.1007/bf02655295
Abstract
No abstract availableKeywords
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