The use of MOS structure for the design of high value resistors in monolithic integrated circuits
- 1 May 1966
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. ED-13 (5), 459-465
- https://doi.org/10.1109/t-ed.1966.15712
Abstract
The application of P-channel MOS structure as a resistor is studied in detail. The device operates below saturation. Effective sheet resistances of 7-25 kohms/sq. can be achieved with fair controllability. The linearity of the V-I characteristics will be determined by the biasing conditions. The temperature coefficient of such a resistor is ≈0.3-0.35 percent/°C.Keywords
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