Silicon Dioxide Thin Films Prepared by Thermal Decomposition of Silicon Tetraacetate

Abstract

Silicon dioxide thin films were prepared by thermal decomposition of silicon tetraacetate. Acetone solutions of the precursor material were applied to a glass substrate, then heated at 300–500°C for 20 min in an air atmosphere. This method was superior to the sol-gel method in the stability of the raw solution and in the low heat-treatment temperature.