Preparation and Deposition Mechanism of a ‐ SiC : H Films by Using Hexamethyldisilane in a Remote H 2 Plasma
- 1 October 1994
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 141 (10), 2910-2914
- https://doi.org/10.1149/1.2059255