Annealing Energy Distribution of Light-Induced Defects of Hydrogenated Amorphous Silicon Films Grown from Silane and Dichlorosilane Gas Mixtures

Abstract

The distributions of annealing energies of light-induced defects obtained from a study of the defect annealing kinetics of films grown from silane and dichlorosilane gas mixtures by plasma enhanced chemical vapour deposition are reported. The results are modelled using a gaussian distribution of annealing energies. The addition of dichlorosilane is found to affect the magnitude and position of the defect annealing energy distribution. As measured by the constant photocurrent method, these films show an increased stability to the creation of light-induced defects under intense pulsed laser illumination.