Evolution of electronically active defects during the formation of SiSiO2 interface monitored by combined surface photovoltage and spectroscopic ellipsometry measurements
- 30 June 1997
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 36 (1-4), 43-46
- https://doi.org/10.1016/s0167-9317(97)00012-9
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Preparation of H-terminated Si surfaces and their characterisation by measuring the surface state densityApplied Surface Science, 1996
- Defects at the Si/SiO2 interface: Their nature and behaviour in technological processes and stressNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1996
- Growth oscillations with monolayer periodicity monitored by ellipsometry during metalorganic vapor phase epitaxy of GaAs(001)Applied Physics Letters, 1995
- Investigation of native-oxide growth on HF-treated Si(111) surfaces by measuring the surface-state distributionApplied Physics A, 1994
- Radiation induced degradation of Si/SiO2 structures and the nature of defectsNuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 1992
- Fundamentals and applications of variable angle spectroscopic ellipsometryMaterials Science and Engineering B, 1990
- Spectrum and nature of defects at interfaces of semiconductors with predominant homopolar bondingSurface Science, 1988
- Investigation of energetic surface state distributions at real surfaces of silicon after treatment with HF and H2O using large-signal photovoltage pulsesJournal of Physics D: Applied Physics, 1979