Saturation mechanism in 1-µm gate GaAs FET with channel—Substrate interfacial barrier
- 1 June 1980
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 27 (6), 1019-1024
- https://doi.org/10.1109/T-ED.1980.19980