Molecular beam epitaxial growth of low-resistivity ZnSe films

Abstract

Single‐crystalline films of low‐resistivity ZnSe have been successfully grown by molecular beam epitaxy (MBE). The film shows good crystallinity, having a smooth and flat surface as revealed by RHEED and SEM investigations. The resistivity of as‐grown MBE ZnSe is low (typically ∼1 Ω cm) and the mobility of the film is relatively high (typically ∼300 cm²/V sec) at room temperature. The concentrations of the residual electrically active donor and acceptor centers are N_D =8×10¹⁶ cm⁻³ and N_A=6×10¹⁶ cm⁻³, respectively. The strong blue band‐edge photoluminescence peak is observed even at room temperature, and the luminescence intensity at longer wavelength is very weak.