Hydrogen plasma induced defects in silicon
- 31 October 1988
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 53 (18), 1735-1737
- https://doi.org/10.1063/1.99810
Abstract
The nature of extended defects in silicon introduced by hydrogen containing plasmas has been studied by transmission electron microscopy for a variety of technological processes. Depending on the doping level of the substrate, the substrate temperature and the presence/absence of simultaneous energetic ion bombardment, {111} planar defects, gas bubbles, and a heavily damaged near-surface region have been observed.Keywords
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