Use of the ‘mist’ (liquid-source) deposition system to produce new high-dielectric devices: ferroelectric-filled photonic crystals and Hf-oxide and related buffer layers for ferroelectric-gate FETs
- 30 April 2003
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 66 (1-4), 591-599
- https://doi.org/10.1016/s0167-9317(02)00970-x
Abstract
No abstract availableKeywords
This publication has 16 references indexed in Scilit:
- Alternative Gate Dielectrics for MicroelectronicsMRS Bulletin, 2002
- Crystal Structure of Bi(OCMe2CH2OMe)3 and Its Use in the MOCVD of Bi2O3Chemical Vapor Deposition, 2001
- High-κ gate dielectrics: Current status and materials properties considerationsJournal of Applied Physics, 2001
- Silicon-Based Photonic CrystalsAdvanced Materials, 2001
- Three-dimensional photonic crystals based on macroporous silicon with modulated pore diameterApplied Physics Letters, 2001
- Thermally tuning of the photonic band gap of SiO2 colloid-crystal infilled with ferroelectric BaTiO3Applied Physics Letters, 2001
- Advanced chemical deposition techniques - from research to productionIntegrated Ferroelectrics, 2001
- Liquid source misted chemical deposition (LSMCD)–a critical reviewIntegrated Ferroelectrics, 1995
- Synthesis and X-Ray Structural Analysis by the Rietveld Method of Orthorhombic HafniaJournal of the Ceramic Society of Japan, 1991
- Crystal Structure of Monoclinic Hafnia and Comparison with Monoclinic ZirconiaJournal of the American Ceramic Society, 1970