Application of film bulk acoustic resonators
- 2 January 2003
- proceedings article
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
Multipole film bulk acoustic resonator (FBAR) bandpass filters are being designed and fabricated on various substrates, including silicon and GaAs. Capable performance has been demonstrated for the large number of system insertions within the low microwave (1-3 GHz) range. Progress in applying FBARs to microwave system applications is reviewed. Refinements in processing of critical piezoelectric films on semiconductor substrates have allowed filter development for specific products to begin. Key tradeoffs involve substrate choice and level of monolithic integration to meet performance and yield requirements.> Author(s) Horwitz, S. Westinghouse Electron. Syst. Group, Baltimore, MD, USA Milton, C.Keywords
This publication has 2 references indexed in Scilit:
- Microwave Acoustic Devices in SystemsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Design and fabrication of two-pole monolithic bulk acoustic filtersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002