Near-surface regrowth rate effects in high-dose ion-implanted (100) silicon
- 1 November 1980
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 37 (9), 829-831
- https://doi.org/10.1063/1.92096
Abstract
High‐resolution Rutherford backscattering and channeling has been employed to investigate regrowth kinetics of amorphous layers in high‐dose As‐ and Pb‐implanted (100) silicon. Our results indicate that epitaxial regrowth rates are severely retarded by high concentrations of Pb and As in the silicon lattice and that polycrystalline growth may predominate under such conditions.Keywords
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